2006. 11. 8 1/2 semiconductor technical data PG03FBESC tvs diode for esd protection in portable electronics revision no : 3 protection in portable electronics applications.features h 50 watts peak pulse power (tp=8/20 s) h transient protection for data lines to iec 61000-4-2(esd) 15kv(air), 8kv(contact) iec 61000-4-4(eft) 40a(tp=5/50ns) iec 61000-4-5(lightning) 5a(tp=8/20 s) h bidirectional type pin configuration structure. h small package for use in portable electronics. h suitable replacement for multi-layer varistors in esd protection applications. h protects one i/o or power line. h low clamping voltage. h low leakage current. applications h cell phone handsets and accessories. h microprocessor based equipment. h personal digital assistants (pda s) h notebooks, desktops, & servers. h portable instrumentation. h pagers peripherals. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol rating unit peak pulse power (tp=8/20 s) p pk 50 w junction temperature t j -55 q 150 ? storage temperature t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 3.3 v reverse breakdown voltage v br i t =1ma 4.2 - 6.2 v reverse leakage current i r v rwm =3.3v - - 20 a junction capacitance c j v r =0v, f=1mhz - - 80 pf downloaded from: http:///
2006. 11. 8 2/2 PG03FBESC revision no : 3 downloaded from: http:///
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